The gallium arsenide based devices are designed for the point-to-point wireless backhaul market. The company has also taken on ex RFMD veteran Sushil Kumar as Senior Director of IC Development to lead engineering efforts for the radio wireless product line
Mobile Hotspots program progresses towards providing 1 Gb/s communications backbone to deployed units. During Phase 1, performers demonstrated output power exceeding 1 watt and 20 percent power added efficiency (PAE) from a single gallium nitride (GaN) chip operating at E-Band frequencies
The systems are suited for testing devices made of wide-bandgap materials like SiC and GaN, designed for use in "green," energy-efficient power generation and transmission systems and hybrid and all-electric vehicles.