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Tuesday 6th May 2014
Odakyu's 1000 series urban train to achieve dramatic lower energy and remodeling costs with silicon carbide technology
Friday 2nd May 2014
The firm will use Keragis' GaN and GaAs technology for power amplifiers
Friday 2nd May 2014
The firm's tool characterises power device parameters, such as RDSON , Leakage, Ciss, Coss, Crss and gate charge
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Friday 2nd May 2014
The universal-mounted resistor is claimed to offer a drop-in replacement for competing solutions
Friday 2nd May 2014
The focus of the project will be on widebandgap semiconductors such as silicon carbide and gallium enable smaller, faster and more reliable power electronic devices than those that are silicon-based
Thursday 1st May 2014
The firm says extending its GaN-on-silicon and GaN-on-SiC technologies enables customers greater flexibility in selecting the best solution to solve their RF and microwave design challenges
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Tuesday 29th April 2014
The gallium nitride on silicon carbide broadband transistor delivers 55 percent efficiency with 50 V operation over a DC-3500 MHz frequency range
Monday 28th April 2014
The indium gallium phosphide based PAs are suited for use in mobile devices. The AWT6530 is compatible with chipsets from suppliers including MediaTek, HiSilicon and Qualcomm
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Friday 25th April 2014
Julian Styles of GaN Systems, is one of the trio joining the PEIC to drive the development of power electronics
Friday 25th April 2014
Market analyst Yole Développement says that GaN-on-silicon IP is advanced enough for mass production to commence
Friday 25th April 2014
Produced by industry experts, EPC has posted an eleven-part series on the theory, design basics and applications for gallium nitride power transistors

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