DOWA Electronic Materials Co., Ltd.DOWA Electronics Materials is a Japanese manufacturing company. Our current products are as followings.
GaN on Si epiwafers: High breakdown voltage with thicker epi layer for power switching devices.
Si-doped GaAs substrates: Low EPD level for laser diode and LED applications.
Red/IR LED chips: 630nm to 940nm, High power LED chips. Deep UV-LED: 265nm to 340nm wavelength. LED bare die and lamp packages are available.
High Purity Metals: 6N Ga, In, Mg, Zn and Sb are available.
Established in1884, DOWA group is one of the most predominant mining and smelting companies in Japan. DOWA Electronics Materials Co., Ltd. is one of the operation companies in DOWA Holdings Co., Ltd. DOWA has started the semiconductor material business since 1982 with refining Gallium. Since then, we have expanded our business area from Japan to all over the world. Our technologies allow us to develop high quality and cutting edge products. Our current products are as followings. GaN on Si epi wafers: Our epi wafers can achieve high breakdown Voltage with thicker epi layer for power switching devices. Currently, 3", 4", 5"and 6"are available. 8" is coming soon. Si-doped GaAs substrates: Low EPD level for Laser Diode and LED applications. 2", 3" and 4" are available. Red/IR LED chips: Our high power LED bare dies cover 630nm to 940nm wavelength. Deep UV-LEDs: Our LEDs cover 265nm to 340nm. Bare dies and Lamps are available. High Purity Metals: 6N Ga, In, Mg, Zn and Sb are available.
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