Norstel and Ascatron join forces to address SiC market
Ascatron AB, a company specialising in SiC epitaxy and Norstel AB, a pioneer in SiC substrates and epitaxy wafers, have entered into a cooperation agreement to jointly address the SiC epitaxy market.
Both Norstel and Ascatron already provide SiC epitaxy to the power electronic industry, but by utilising and sharing their expertise, equipment and capabilities, the two companies hope to grow their businesses. Another reason for the cooperation is an increased demand for high performance epitaxy in terms of layer thickness, advanced structures and higher quality, driven by semiconductor device makers targeting higher voltages, new device types and generally better yield in device fabrication.
While Norstel's core offering being SiC crystal growth and high quality SiC wafers including epitaxy for volume production, Ascatron specialty is customised SiC epitaxy and device design. "By combining the proven epitaxy production capacity of Norstel with our experience of advanced material we will be able to serve all type of SiC epitaxy needs. From serial production of low defect epi for Schottky's and MOSFET's, to R&D prototyping of thick epi with our unique buffer technology for future bipolar devices like IGBT's", says Christian Vieider, CEO of Ascatron.
Per Zellman, acting CEO of Norstel adds: "We see the cooperation with Ascatron as a natural step to further utilise our capabilities in SiC epitaxy and to increase our market reach. The companies have complementary capabilities and we are already cooperating successfully in projects like the EU project SPEED for new generations of high-power semiconductor devices."
The new constellation is presently able to provide SiC epitaxial layers with both n- and p-doping up to 250µm thickness on wafers with diameters up to 100 mm. Also 150 mm wafers will be supported within a short time.
