Mitsubishi to Launch tiny SiC Power Factor Correction Module
Reduces power consumption and size of small motors for home appliances
Mitsubishi Electric has launched a transfer-moulded super-mini dual in-line package power factor correction (DIPPFC) module incorporating silicon carbide transistors and diodes, which is expected to help reduce the power consumption and size of home appliances. Mitsubishi Electric's new DIPPFC module will be exhibited at MOTORTECH JAPAN 2014 during TECHNO-FRONTIER 2014, which will be held at Tokyo Big Sight in Japan from July 23 to 25.
SiC contributes to lower power consumption and compact size. Features of the module include: power loss reduction of about 45 percent compared to silicon products; a SiC schottky barrier diode (SBD) to reduce recovery current power consumption and electromagnetic interference noise; SiC MOSFET achieves maximum 40kHz high-frequency switching and contributes to downsizing of peripheral components, such as reactors and heat sinks; power factor correction (PFC) and driving IC contribute to downsizing by reducing mounting surface area and simplifying wiring.
Mitsubishi Electric commercialised its first DIPIPM transfer-moulded intelligent power module in 1997 and over the years has contributed greatly to miniaturization and energy-savings in inverter systems. The technology has gained increased importance because annual power consumption has become an important index of energy savings in consumer appliances, such as air conditioners.
Development of this DIPPFC module has been partially supported by Japan's New Energy and Industrial Technology Development Organization (NEDO).