News Article
Hittite GaAs amplifier targets radar, PtP and VSAT markets
The new 2W gallium arsenide based power amplifier covers 27.5 to 31 GHz
Hittite Microwave Corporation is launching a new GaAs pHEMT MMIC power amplifier.
It is ideally suited for Ka-band VSAT (Very Small Aperture Terminal), high capacity microwave radio and radar systems in the 27.5 to 31 GHz frequency range. VSAT is a device - known as a small private earth station - that is used to transmit & receive data signal through a satellite.
The HMC7441 is a three-stage GaAs pHEMT power amplifier which operates between 27.5 and 31 GHz. The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25 percent PAE from a 6V supply.
With an excellent output IP3 of +38 dBm, the HMC7441 power amplifier is ideal for linear applications demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ω for ease of integration into Multi-Chip-Modules (MCMs).
The device complements Hittite's extensive line of microwave power amplifiers which provide continuous frequency coverage from 0.01 to 86 GHz. Samples are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.
Hittite Microwave Corporation is q designer and manufacturer of high performance integrated circuits, or ICs, modules, subsystems and instrumentation for technically demanding digital, RF, microwave and millimetre wave applications covering DC to 110 GHz.