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Toshiba​​ 3rd gen SiC MOSFETs reduce switching losses


New devices in 4-pin package offer improved performance in industrial applications

Toshiba has launched the TWxxxZxxxC series of ten SiC MOSFETs based upon their third-generation technology. They are intended to reduce losses in a wide variety of industrial applications including switching power supplies for servers & data centres, electric vehicle (EV) charging stations, photovoltaic (PV) inverters and uninterruptible power supplies (UPS).

Devices in the TWxxxZxxxC series are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin. This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic inductance effects of the internal source wire and improving high-speed switching performance. Comparing the TW045Z120C with Toshiba’s existing TW045N120C (3-pin TO-247) shows an improvement in turn-on loss of approximately 40% while the turn-off loss is improved by around 34 percent.

The new TWxxxZxxxC series includes five devices with a drain-source (VDSS) rating of 650V and a further five devices rated at 1200V for higher voltage applications. The typical drain-source on-resistance (RDS(ON)​) is ranging between 140mΩ and 15mΩ. Combined with low gate drain charge (Q​GD) values, it will enable low losses even in high frequency applications.

The devices are capable of delivering continuous drain currents (ID) of up to 100A.

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