EPC Announces Rad Hard 100V GaN FET
Offers lowest on-resistance for demanding space applications
EPC has expanded its family of rad-hard GaN products for power conversion solutions in critical spaceborne and other high-reliability environments with a 100V device that is believed to offer the lowest on-resistance of any 100 V rad hard transistor on the market.
The EPC7018 is a 3.9 mΩ, 345A Pulsed GaN FET in a 13.9 mm2 footprint. It has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7018, along with the rest of the rad hard family, EPC7014, EPC7007, EPC7019, comes in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
Applications benefiting from the performance and fast deployment of the EPC7018 include DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.
“The EPC7018 offers designers a high power, ultra-low on-resistance device enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before”, said Alex Lidow, CEO, and co-founder of EPC
The EPC7018 is available for engineering sampling and will be fully qualified for volume shipments in December 2022.