New 3.3 kV power module from Infineon
Infineon’s XHP 3 package comprises a compact form factor with 140 mm in length, 100 mm in width and 40 mm in height. The first IGBT modules of this new high-power platform feature a half bridge topology with a blocking voltage of 3,3 kV and a nominal current of 450 A. In order to meet customers’ demands, two different isolation classes are launched simultaneously: 6 kV (FF450R33T3E3) and 10.4 kV (FF450R33T3E3_B5) isolation, respectively. Ultrasonic welded terminals and aluminum nitride substrates along with an aluminum silicon carbide base plate ensure the highest possible level of reliability and robustness.
The high-power IGBT module is designed for paralleling and, for this reason, offers a new level of scalability. System designers can now easily adapt the desired power level by paralleling the required number of XHP 3 modules. To facilitate scaling, Infineon offers pre-grouped devices featuring a matched set of static and dynamic parameters. Using these grouped modules, de-rating is no longer required when paralleling up to eight XHP 3 devices.
