Info
Info
News Article

MACOM Announces Highest Power GaN L-Band Radar HEMT

50W GaN on SiC transistor targets 1.2 to 1.4 GHz
Macom has introduced a new GaN on SiC HEMT power transistor which it claims offers the highest peak power in the industry for a single-ended power transistor optimised for pulsed L-Band radar.

The MAGX-001214-650L00 guarantees 650W of peak power with a typical 19.5 dB of gain and 60 percent efficiency. The device also has a high breakdown voltage which allow customers reliable and stable operation at 50V under more extreme load mismatch conditions. The device is assembled in a ceramic flange package and has undergone MACOM's rigorous qualification and reliability testing.

"The MAGX-001214-650L00 is a clear leader in high pulsed power GaN technology with guaranteed 650 W of peak output power combined with excellent gain, efficiency and reliable performance," said Paul Beasly, product manager. "The device is an ideal candidate for customers looking to combine two power transistors and realise over 1,000 W of peak power in a single pallet for next generation L-Band radar systems that require increased performance in smaller footprints."

Operating between the 1200 to 1400 MHz Frequency range, the MAGX-001214-650L00 has a mean time to failure (MTTF) of 5.3 x106 hours.


Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}